Vertical Nonvolatile Schottky‐Barrier‐Field‐Effect Transistor with Self‐Gating Semimetal Contact (Adv. Funct. Mater. 19/2023)

Materials and Wireless Microfluidic Systems for Electronics Capable of Chemical Dissolution on Demand (Adv. Funct. Mater. 92015)

Metamaterials: Snapping Mechanical Metamaterials under Tension (Adv. Mater. 39/2015).

By exploiting snap-through instabilities, D. Pasini and co-workers design a damage-tolerant mechanical metamaterial that snaps sequentially under tension, thereby accommodating a very large deformation up to 150%. On page 5931, they describe how the nonlinear mechanical response of the metamaterial can be robustly programmed by tuning the architecture of its unit cell.

Humanoid Vertical Jump with Compliant Contact

The objective of the authors is to achieve a vertical jump in experimentation using the humanoid robot HRP-2. After satisfactory results considering rigid foot ground contact, this paper studies the vertical jump considering a compliant contact and discusses the differences between both models.

Vertical Bipolar Charge Plasma Transistor with Buried Metal Layer

A self-aligned vertical Bipolar Charge Plasma Transistor (V-BCPT) with a buried metal layer between undoped silicon and buried oxide of the silicon-on-insulator substrate, is reported in this paper. Using two-dimensional device simulation, the electrical performance of the proposed device is evaluated in detail. Our simulation results demonstrate that the V-BCPT not only has very high current g...

Ultrathin silicon-on-insulator vertical tunneling transistor

We have fabricated silicon-on-insulator ~SOI! transistors with an ultrathin Si channel of ;5 nm, tunneling gate oxide of ;1 nm, and 100 nm gate length. In addition to good transistor characteristics, these same devices exhibit additional functionality at low temperature. The drain current ID exhibits steps near the turn-on threshold voltage as a function of the backgate VBG bias on the substrat...